Investigation of Nanostructured Si, In2O3, and CuInS2 thin films for Photovoltaic/ Solar Cells application

General Information


Investigation of Nanostructured Si, In2O3, and CuInS2 thin films for Photovoltaic/ Solar Cells application


Materials & Synthesis

Solar energy is one of the most convenient non-conventional energy resources to be considered for the power requirements of the 21st century. The development of new materials has opened new perspectives for the production of low-cost and high efficient devices. From the economical point of view, these characteristics are essential in order to consolidate photovoltaic energy. One of the most promising thin film photovoltaic technologies is based upon the use of CuInS2 as photovoltaic absorber material, and has already demonstrated efficiencies up to 11.4% in the mini-module scale. CuInS2 presents good optoelectronic properties, due to its well-suited bandgap to the solar spectrum, and its high optical absorption coefficient. However, the possibility to precisely control, modify and optimise the film properties relies on the knowledge of the properties of the films. Despite this, the physico-chemical properties of the thin film CuInS2 absorber layers commonly used for the production of solar are still rather limited. A worldwide research interest in photovoltaics (PV) is continuing in order to produce a low cost and high efficiency electronic device for solar energy conversion. Current scientific activities are mainly concentrated on thin films of Si, In2O3 CuInS2, and Cu2 ZnSnS4 (CZTS), based device structures. In the present research proposal, nanostructure powder samples of Si, In2O3 CuInS2, and Cu2 ZnSnS4 (CZTS), will be prepared by using wet chemical route. Thin films of different thickness will be prepared by Solution method/ Pulse Laser Deposition (PLD) onto chemically ultraclean glass and silicon wafer substrates at a base pressure of 10-8 Torr. Optical absorption, reflection and transmittance measurements will be carried out in wavelength region 200-1000 nm. In addition, I-V characteristics, FTIR, XRD, SEM, TEM, DTA, TGA measurements and their analysis are under investigation. Different photovoltaic parameters will be determined for optimization of the devices.

Main objective of the present project is to develop nanomaterials and to study the physical properties of these materials. In particular, we shall study the optical, electrical transport properties, structural and thermal, which will help to develop the materials suitable for solar cell. 1. We will prepare a number of nanomaterials thin films of Si, In2O3 CuInS2, and Cu2 ZnSnS4 (CZTS), by Solution techniques/ pulse laser deposition (PLD) under different deposition conditions. 2. We will study the optical parameters such as optical band gap, absorption coefficient, refractive index, extinction coefficient. 3. Effect of thickness and annealing on optical properties will be studied. 4. To study the temperature dependence of dc conductivity. 5. The field dependence of conductivity will be measured at different temperature on pulse laser deposition thin films having different electrode separation. Thickness dependence of I-V characteristic of samples will confirm the presence of space charge limited conduction (SCLC). Using this theory of SCLC, the density of localized states near the fermi level will be calculated for various samples. 6. To studies on electrical transport mechanism of these nanostructures. 7. To study the crystal structure, particle and grain size. 8. To study the enthalpy and thermal stability of crystallization. 9. Differential thermal analysis (DTA) will used to investigate crystallization kinetics. 10. We propose to develop the suitable nanostructure materials for solar cell devices.

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